Memory devices and apparatus configured to apply positive voltage levels to data lines for memory cells selected for and inhibited from programming

ABSTRACT

Memory devices including a controller configured to cause the memory device to apply a positive first voltage level to a first data line selectively connected to a first string of series-connected memory cells while applying a second voltage level, higher than the first voltage level, to a second data line selectively connected to a second string of series-connected memory cells; while applying the first voltage level to the first data line and applying the second voltage level to the second data line, applying a third voltage level to a particular access line coupled to a memory cell of a first string of series-connected memory cells selected for programming, wherein a differential between the third voltage level and the first voltage level is configured to increase a threshold voltage of the memory cell selected for programming, as well as other apparatus containing similar memory devices.

RELATED APPLICATIONS

This application is a continuation of application Ser. No. 16/035,857,filed on Jul. 16, 2018, and issued as U.S. Pat. No. 10,438,672 on Oct.8, 2019, which is a continuation of application Ser. No. 15/478,312,filed on Apr. 4, 2017, issued as U.S. Pat. No. 10,049,756 on Aug. 14,2018, which is a continuation of application Ser. No. 14/995,302, filedJan. 14, 2016, issued as U.S. Pat. No. 9,646,702 on May 9, 2017, whichis a divisional of application Ser. No. 13/438,331, filed Apr. 3, 2012and issued as U.S. Pat. No. 9,251,907 on Feb. 2, 2016, which arecommonly assigned and incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memories and,in particular, in one or more embodiments, the present disclosurerelates to memory devices and biasing methods for memory devices.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), and flash memory.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications.Non-volatile memory is memory that can retain its stored data for someextended period without the application of power. Common uses for flashmemory and other non-volatile memory include personal computers,personal digital assistants (PDAs), digital cameras, digital mediaplayers, digital recorders, games, appliances, vehicles, wirelessdevices, mobile telephones and removable memory modules, and the usesfor non-volatile memory continue to expand.

Flash memory typically utilizes one of two basic architectures known asNOR Flash and NAND Flash. For example, a NAND flash memory device is acommon type of flash memory device, so called for the logical form inwhich the basic memory cell configuration is arranged and accessed.Typically, the array of memory cells for NAND flash memory devices isarranged such that memory cells are coupled together in series (e.g.,coupled source to drain) to form strings of memory cells. Changes inthreshold voltage of the memory cells, through programming (which issometimes referred to as writing) of charge storage structures (e.g.,floating gates or charge traps) or other physical phenomena (e.g., phasechange or polarization), determine the data value of each cell.

To meet the demand for higher capacity memories, designers continue tostrive for increasing memory density, i.e., the number of memory cellsfor a given area of an integrated circuit die. One way to increasememory density is to reduce the feature size of individual memory cells.Another method has been used to form NAND strings vertically alongsemiconductor pillars, which act as channel regions of the NAND strings.A number of undesirable effects can occur however when operating memorydevices comprising these vertical structures, such as charge leakage andother phenomena which can introduce uncertainty and reduce reliabilityduring various memory device operations, such as programming and/orsensing operations, for example.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foralternative methods of operating various memory device architectures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic representation of an array of NANDconfigured memory cells.

FIG. 2 illustrates a graphical representation of threshold voltageranges in a population of memory cells.

FIG. 3 illustrates a schematic representation of a portion of a 3D arrayof memory cells.

FIG. 4 illustrates an alternate schematic representation of a portion ofa 3D array of memory cells.

FIG. 5 illustrates an alternate schematic representation of a portion ofa 3D array of memory cells.

FIG. 6A illustrates a cross-sectional view of a portion of a 3D array ofmemory cells.

FIG. 6B illustrates an alternate cross-sectional view of a portion of a3D array of memory cells.

FIG. 6C illustrates a cross-sectional view of a portion of a 3D array ofmemory cells under typical biasing conditions.

FIG. 7 illustrates a cross-sectional view of a portion of a 3D array ofmemory cells under biasing conditions according to an embodiment of thepresent disclosure.

FIG. 8 illustrates a plot of waveforms according to an embodiment of thepresent disclosure.

FIG. 9 is a simplified block diagram of a memory device coupled to amemory access device as part of an electronic system according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings that form a part hereof, and in whichis shown, by way of illustration, specific embodiments. In the drawings,like numerals describe substantially similar components throughout theseveral views. Other embodiments may be utilized and structural,logical, and electrical changes may be made without departing from thescope of the present disclosure. The following detailed description is,therefore, not to be taken in a limiting sense.

FIG. 1 illustrates a typical NAND architecture memory array 100 whereincharge storage memory cells 102 of the memory array 100 are logicallyarranged in an array of rows and columns. In a conventional NANDarchitecture, “rows” refers to memory cells having commonly coupledcontrol gates, while “columns” refers to memory cells coupled as one ormore NAND strings of memory cells 102, for example. The memory cells 102of the memory array 100 are arranged together in strings (e.g., NANDstrings), typically of 8, 16, 32, or more each. Memory cells of a string102 are connected together in series, source to drain, between a sourceline 114 and a data line 116, often referred to as a bit line. Eachstring of memory cells 102 is coupled to source line 114 by a sourceselect gate, such as select gates 110 and to an individual bit line 116by drain select gates 104, for example. The source select gates 110 arecontrolled by a source select gate (SGS) control line 112 coupled totheir control gates. The drain select gates 104 are controlled by adrain select gate (SGD) control line 106. The one or more strings ofmemory cells 102 of a memory array 100 are typically arranged in groups(e.g., blocks) of memory cells.

The memory array 100 is accessed by a string driver (not shown)configured to activate a row of memory cells by selecting a particularaccess line 118, often referred to as a word line, such as WL7-WL0 118₇₋₀, for example. Each word line 118 is coupled to the control gates ofa row of memory cells 120. Bit lines BL1-BL4 116 ₁-116 ₄ can be biasedto a particular potential depending on the type of operation beingperformed on the array. Bit lines BL1-BL4 116 are coupled to sensedevices (e.g., sense amplifiers) 130 that detect the data state of eachcell by sensing voltage or current on a particular bit line 116. As isknown to those skilled in the art, the number of word lines and bitlines might be much greater than those shown in FIG. 1.

Memory cells 102 may be configured as what are known in the art asSingle Level Memory Cells (SLC) or Multilevel Memory Cells (MLC). SLCand MLC memory cells assign a data state (e.g., representing arespective value of one or more bits) to a specific range of thresholdvoltages (Vt) stored on the memory cells. Single level memory cells(SLC) permit the storage of a single binary digit (e.g., bit) of data oneach memory cell. Meanwhile, MLC technology permits the storage of twoor more binary digits per cell (e.g., 2, 3, 4, 5 bits), depending on thequantity of Vt ranges assigned to the cell and the stability of theassigned Vt ranges during the lifetime operation of the memory cell. Byway of example, one bit (e.g., 1 or 0) may be represented by two Vtranges, two bits by four ranges, three bits by eight ranges, etc.

Programming typically involves applying one or more programming pulses(Vpgm) to a selected word line 118, such as WL4 118 ₄, and thus to thecontrol gates of the row of memory cells 120 coupled to the selectedword line 118. Typical programming pulses (Vpgm) start at or near 15Vand tend to increase in magnitude during each programming pulseapplication. While the program potential (e.g., programming pulse) isapplied to the selected word line 118, a potential, such as a groundpotential (e.g., 0V), is applied to the substrate, and thus to thechannels of these memory cells, resulting in a charge transfer from thechannel to the charge storage structures of memory cells targeted forprogramming. For example, floating gates are typically charged throughdirect injection or Fowler-Nordheim tunneling of electrons from thechannel to the floating gate, resulting in a Vt typically greater thanzero in a programmed state. In the example of FIG. 1, a Vpass potentialis applied to one or more unselected word lines 118 ₇₋₅ and 118 ₃₋₀.Vpass might be 10V, for example. The Vpass applied to each unselectedword line might be different potentials. A word line adjacent to theselected word line might be biased to a Vpass potential of 8V and thenext adjacent word line might be biased to 7V, for example. The Vpasspotentials are not high enough to cause programming of memory cellsbiased to a Vpass potential. One or more additional unselected wordlines might be biased to a different potential than a Vpass potential,such as to 0V, for example.

An inhibit potential is typically applied to bit lines 116 (e.g., Vcc)which are not coupled to a NAND string containing a memory cell 102 thatis targeted for programming. During a programming operation in ashielded bit line architecture, for example, alternate bit lines 116 maybe enabled and inhibited from programming. For example, even numberedbit lines 116 (e.g., 116 ₂, and 116 ₄) might be enabled for programmingof memory cells coupled to even numbered bit lines 116 while the oddnumbered bit lines 116 (e.g., 116 ₁ and 116 ₃) are inhibited fromprogramming memory cells coupled to the odd numbered bit lines 116. Asubsequent programming operation might then inhibit the even numberedbit lines 116 and enable the odd numbered bit lines 116. For example,the memory cells 102 of row 120 having solid line circles are selectedfor programming whereas the memory cells 102 having dashed line circlesare inhibited from programming as shown in FIG. 1. However, variousembodiments according to the present disclosure are not limited toenabling and/or inhibiting alternate bit lines. Bit lines can beindependently enabled or inhibited, such as during a programmingoperation according to one or more embodiments, for example.

Between the application of one or more programming (e.g., Vpgm) pulses,a verify operation is typically performed to check each selected memorycell to determine if it has reached its intended programmed state. If aselected memory cell has reached its intended programmed state it isinhibited from further programming if there remain other memory cells ofthe selected row still requiring additional programming pulses to reachtheir intended programmed states. Following a verify operation, anadditional programming pulse Vpgm is applied if there are memory cellsthat have not completed programming. This process of applying aprogramming pulse followed by performing a verify operation typicallycontinues until all the selected memory cells have reached theirintended programmed states. If a particular number of programming pulses(e.g., maximum number) have been applied and one or more selected memorycells still have not completed programming, those memory cells might bemarked as defective, for example.

FIG. 2 illustrates an example of Vt ranges 200 for a population of MLC(four level) (e.g., 2-bit) memory cells. For example, a memory cellmight be programmed to a Vt that falls within one of four different Vtranges 202-208 of 200 mV, each being used to represent a data statecorresponding to a bit pattern comprised of two bits. Typically, a deadspace 210 (e.g., sometimes referred to as a margin and might have arange of 200 mV to 400 mV) is maintained between each range 202-208 tokeep the ranges from overlapping. As an example, if the Vt of a memorycell is within the first of the four Vt ranges 202, the cell in thiscase is storing a logical ‘11’ state and is typically considered theerased state of the cell. If the Vt is within the second of the four Vtranges 204, the cell in this case is storing a logical ‘10’ state. A Vtin the third Vt range 206 of the four Vt ranges would indicate that thecell in this case is storing a logical ‘00’ state. Finally, a Vtresiding in the fourth Vt range 208 indicates that a logical ‘01’ stateis stored in the cell.

Various architectures of memory (e.g., non-volatile memory) are utilizedto increase the memory density of memory devices. One such architectureis referred to as three-dimensional (3D) memory which incorporatesvertical structures which may include semiconductor pillars where atleast a portion of each pillar acts as a channel region of the memorycells. FIG. 3 illustrates a schematic representation of a 3D NAND memoryarray 300. The NAND strings of memory cells are each coupled between abit line BL1-BLN 308 and a source SRC 310. Multiple strings are coupledto the same bit line, such as strings 302-306. Individual memory cellstrings can be selected by biasing the SGD lines, such as linesSGD1-SGDL 312, coupled to control gates of particular drain select gates314 between each string 302-306 of memory cells and bit line BL1 308 ₁,for example.

FIG. 4 illustrates an alternate schematic representation of a 3D NANDmemory array 400. The schematic illustrates three blocks 402-406 of NANDstrings of memory cells 408. By way of example, each block of NANDstrings of memory cells shown in FIG. 4 (e.g., BLOCK_P−1, BLOCK_P,BLOCK_P+1) might comprise a portion of an array such as shown in FIG. 3.Although not shown in FIG. 4, each block might comprise additionalstrings of memory cells such as behind the plane of the page, forexample. The SGD1-SGDL lines 412 shown in FIG. 4 might correspond to theSGD1-SGDL 312 lines shown in FIG. 3. Additionally, the strings 408indicated in FIG. 4 might correspond to the strings 302-306 shown inFIG. 3, for example.

FIG. 5 illustrates another schematic representation of a 3D NAND of amemory array 500. Groups of strings of memory cells 502, 504, 514 areshown in the figure. The memory array 500 might be further arranged intoa plurality of blocks. For example, the strings of memory cells of group502 might comprise a portion of a first block of memory cells and thestrings of memory cells of groups 504, 514 might comprise portions of asecond block of memory cells. The strings of memory cells of group 514are shown in the figure to illustrate that strings of memory cells mightbe located in different planes of the memory array. Many more strings ofmemory cells might be present behind and/or in front of the face planeof the page of FIG. 5 but are not shown to improve readability of thefigure.

Each string of memory cells of FIG. 5 comprises a U-shaped string ofmemory cells coupled between a bit line and a source, sometimes referredto as a slot. For example, the strings of memory cells indicated at 506and 512 and shown coupled between BL1 508 ₁ and the SLOT 510 comprisetwo strings of memory cells. At the bottom of each U-shaped string 506,512 is a connector gate 516 to couple a first portion and a secondportion of each U-shaped string of memory cells together. The connectorgates 516 are biased by a control line 518 coupled to their controlgates. The control line 518 might be biased from approximately 5 to 10Vto activate the connector gates 516, for example. Word lines nearest abit line (e.g., BL1 508 ₁) and a connector gate (e.g., 516) mightcomprise edge word lines.

Selecting a particular string of memory cells from a group of strings ofmemory cells coupled to the same bit line, such as strings 506 and 512both coupled to BL1 508 ₁, might comprise biasing the selected SGD line(e.g., SGD(SEL) 522) coupled to a selected select gate between the bitline 508 ₁ and the selected string (e.g., 512) of memory cells to aparticular potential. An inhibited SGD line 524 (e.g., SGD(INH)) coupledto an unselected select gate coupled between the bit line 508 ₁ and theadjacent string of memory cells, such as string of memory cells 506,might be biased to a potential so as to deselect string of memory cells506. For example, memory cell 526 might be selected for programming.Thus, SGD(SEL) 522 might be biased to select string of memory cells 512and SGD(INH) 524 might be biased to deselect string of memory cells 506.During the programming operation, the word line (e.g., WL(SEL) 528)coupled to the selected memory cell 526 might be biased by one or moreprogramming pulses applied to the selected word line.

FIG. 6A illustrates a cross-sectional view of an array 600 of verticallyformed memory cells (e.g., 3D memory.) The cross-sectional view shown inFIG. 6A might be representative of a plurality of strings of NANDconfigured memory cells coupled to the same bit line, such as memorycell strings 302-306 shown coupled to bit line BL1 308 ₁ shown in FIG.3, for example. The structure encompassed by the dashed line 602 mightcomprise a first string of memory cells wherein the structureencompassed by the dashed line 604 might comprise a second string ofmemory cells. The first structure 602 might be representative of astring of memory cells such as string 302 shown in FIG. 3. Whereas thesecond structure 604 might be representative of a string of memory cellssuch as 304 also shown in FIG. 3. The strings of memory cells are showncoupled to the same bit line 606 by select gate (e.g., drain selectgate) structures 608. The strings of memory cells are also shown to beformed above a semiconductor (e.g., semiconductor substrate) 610. TheSRC 310 shown in FIG. 3 might be represented by the layer 612 formedabove the substrate 610 as shown in FIG. 6A, for example. The SRC layer612 is sometimes referred to as a slot. Although not shown in FIG. 6A,the SRC layer 612 might be isolated from the substrate 610 by one ormore structures of material (e.g., layers of dielectric material) formedbetween the SRC layer and the substrate.

FIG. 6A further illustrates a select gate structure 614 (e.g., sourceselect gate) coupled between the memory cell strings and the slot 612.Further, word lines 618 are also shown in FIG. 6A. The regionencompassed by the dashed line 620 illustrates a location within thestructure 600 of a particular memory cell of a particular string ofmemory cells. The memory cells might comprise isolated floating gatememory cell structures. Alternatively, the memory cells mightincorporate a continuous charge storage structure (e.g., continuouscharge storage layer), for example. The floating gate and continuouscharge storage structures are not shown in FIG. 6A to improvereadability of the figure.

FIG. 6B illustrates an alternate cross-sectional view of the structureshown in FIG. 6A. The view shown in FIG. 6B is that of the viewpointtaken along the view line 622 shown in FIG. 6A. Whereas, the view shownin FIG. 6A is that of the viewpoint taken along the view line 624 shownin FIG. 6B, for example. Bit line 606 shown in FIG. 6B corresponds tothe bit line 606 shown in FIG. 6A. The region encompassed by the dashedline 620 shown in FIG. 6B corresponds to the region 620 encompassed bythe dashed line shown in FIG. 6A.

FIG. 6C illustrates a cutaway view of the two structures 602 and 604,shown from the viewpoint of an array as shown in FIG. 6A, for example.The memory cells of FIG. 6C might comprise isolated floating gate memorycells or might comprise continuous charge storage structures. In orderto improve readability of the figure, these storage structures are onlyindicated in FIG. 6C at 626 for one memory cell.

During a programming operation performed in the memory device, one ormore undesirable effects might occur. By way of example, a typicalprogramming biasing scheme is discussed by way of reference to FIG. 6C.A particular memory cell 628 of structure 602 might be selected for aprogramming operation. Whereas, the structure 604 does not include anymemory cells selected to be programmed. Both the selected structure 602,i.e. a structure comprising a selected memory cell 628, and the adjacentunselected structure 604 are coupled to the same bit line 606 by thedrain select gates 608 ₂ and 608 ₃, respectively.

During a typical programming operation, the bit line 606 might be biasedto 0V and the slot 612 might be biased to a supply potential Vcc, suchas 2.3V, for example. The word line 618 ₄ coupled to the selected memorycell 628 might receive a programming signal comprising one or moreseries of pulses which might begin at 15V and increase with each pulseuntil the selected memory cell has achieved the desired program level.The remaining word lines 618 ₇₋₅ and 118 ₃₋₀ might be biased to aninhibit potential VINH, such as 10V, for example. Word lines 618 ₇ and618 ₀ might be referred to as edge word lines. The source select gate614 might be biased to a potential, such as 0.5V, as it may be desiredto cut off each string from the slot potential (e.g., 2.3V) during theprogramming operation. The drain select gate 608 ₂ of the selectedstructure 602 might be biased to a potential of 2V to activate the drainselect gate to establish a 0V potential in the channel region 630 duringthe programming operation. The drain select gate 608 ₃ of the unselectedstructure 604 might be biased to 0V to deactivate the drain select gateto facilitate establishing an elevated potential in the channel region632 as a result of coupling (e.g., capacitive coupling) with the appliedword line 618 potentials. The channel regions 632 for the unselectedstructure 604 might be capacitively coupled up to a potential such as 8Vduring the programming operation, for example.

However, various leakage currents might occur as a result of the biasingscheme described above with respect to FIG. 6C. These leakage currentscan lead to uncertainty and reduced reliability in the resulting biasingconditions during a programming operation. For example, leakage currentsrepresented by the arrows 634 might occur between the channel region 630and the slot 612 of the selected structure 602. These leakage currents634 might result in the potential of the channel 630 being pulled upfrom the intended 0V bias potential towards the slot 612 potential of2.3V, for example. In addition, leakage currents represented by thearrows 636 between the channel region 632 of the unselected structure604 and the bit line 606 might decrease the resulting potential of thechannel 632 from the intended potential of 8V as described above.

Biasing methods according to various embodiments of the presentdisclosure can facilitate a reduction in the abovementioned leakagecurrents, such as indicated at 634 and 636, which can improve thereliability of resulting bias conditions within the memory array duringa programming operation, for example. Biasing methods according to oneor more embodiments might be presented by way of reference to FIG. 7.FIG. 7 illustrates a cutaway view of a similar memory array structure asthat shown in FIG. 6C. However, FIG. 7 illustrates a reduction inleakage currents in the regions 740 and 742 as compared to those leakagecurrents (e.g., as indicated by arrows 634, 636) described above withrespect to FIG. 6C. FIG. 7 illustrates a selected structure 702comprising a string of memory cells where the string of memory cellscomprises a memory cell selected for programming as indicated at region728. The adjacent structure 704 comprising a string of memory cells doesnot comprise a memory cell selected for programming.

Structures 702 and 704 are both coupled to the same bit line 706 byseparate drain select gates 744 and 746, respectively. Thus, the channelregion 730 of selected structure 702 and the channel region 732 of theunselected structure 704 might be independently coupled between thememory cells of their respective strings and the bit line 706 byindependently biasing the drain select gates (e.g., 744, 746) of eachstructure 702 and 704. For example, drain select gate 746 of unselectedstructure 704 might be deactivated and drain select gate 744 of selectedstructure 702 might be activated while bit line 706 and source line 712(e.g., slot) are biased to a particular potential during a programmingoperation according to one or more embodiments of the presentdisclosure. A source select gate structure 714 is shown in FIG. 7according to one or more embodiments of the present disclosure. Aportion of source select gate structure 714 of structure 702 might beconfigured to be concurrently activated and deactivated along with aportion of source select gate structure 714 of structure 704 accordingto various embodiments of the present disclosure, for example.

According to one or more embodiments, the structure shown in FIG. 7might comprise a portion of a floating body architecture memory array.This type of structure might be configured wherein a portion of eachpillar (e.g., regions between the channel regions 730 and/or 732) may befloating during a programming and/or erase operation performed on thememory array, for example. The pillars (e.g., body regions) mightcomprise a p-type material (e.g., p-type polysilicon) whereas a drainregion 748 and the source line 712 might comprise an n-type material(e.g., n+ polysilicon) in contact with the p-type material of thepillars. Thus, a structure of the n-type drain region, p-type pillar,and an n-type source line might comprise an n-p-n transistor structureaccording to various embodiments of the present disclosure, for example.

FIG. 8 illustrates waveforms 800 developed in facilitating one or morebiasing methods according to various embodiments of the presentdisclosure. Two phases of performing a programming operation areillustrated in FIG. 8. A pre-charge (e.g., seeding) phase 802 isperformed followed by a programming phase 804. The absolute magnitudes,relative magnitudes and/or durations (e.g., time) of the signals shownare not meant to be limiting but are intended to be illustrative indescribing one or more embodiments according to the present disclosure.

The waveforms shown in FIG. 8 are discussed by way of example of aprogramming operation performed on a selected memory cell, such asmemory cell 728 of FIG. 7. Table 1 provides an example of biasingconditions applied during the programming phase 804 shown in FIG. 8 andin accordance with one or more embodiments of the present disclosure.Table 1 is divided into a SELECTED BLOCK column and a DE-SELECTED BLOCKcolumn. The SELECTED BLOCK column might correspond to a block of memorycells comprising one or more memory cells selected for a programmingoperation, such as BLOCK_P 404 as shown in FIG. 4. The DE-SELECTED BLOCKcolumn might correspond to a block of memory cells which do not comprisememory cells selected for programming, such as BLOCK_P−1 402 and/orBLOCK_P+1 406 shown in FIG. 4, for example. The SGD(SEL) signal shown inFIG. 8 and Table 1 might correspond to the potential applied to the SGDstructure 744, whereas the SGD(INH) signal of FIG. 8 might correspond toa potential applied to the SGD structure 746 of FIG. 7. WL(INH) (i.e.,unselected word lines) of FIG. 8 might correspond to potentials appliedto word lines coupled to one or more memory cells other than theselected memory cell 728. WL(SEL) (i.e., selected word line) of FIG. 8might correspond to the potential applied to the selected word line 718coupled to the selected memory cell 728. EDGE_WL of FIG. 8 mightcorrespond to a potential applied to the edge word line 720 of FIG. 7.

SGS of FIG. 8 might correspond to a potential applied to the SGSstructure 714, BL(SEL) (i.e., selected bit line) might correspond to apotential applied to the bit line 706 and BL(INH) (i.e., unselected bitline) might correspond to potentials applied to one or more bit lines(not shown in FIG. 7) which are not coupled to the one or more memorycells selected for programming. SRC of FIG. 8 might correspond to apotential applied to the slot structure 712.

During the pre-charge phase 802 the SGD(SEL), SGD(INH), WL(INH), WL(SEL)and EDGE_WL potentials shown in FIG. 8 are applied to their respectivestructures of the array. Following the application of these potentials,the BL(SEL), BL(INH) and SRC potentials are applied as indicated in FIG.8. Following a particular period of time (e.g., after establishing asteady state bias level on BL(SEL)), the BL(SEL) potential can beadjusted to a lower potential than originally applied as indicated attime 808, for example. The potentials (e.g., 0.5V and 1V) shown onBL(SEL) in FIG. 8 are intended to be illustrative and not limiting. Thepotentials applied to one or more selected bit lines might depend on adifference between a present and a desired threshold voltage (Vt) of oneor more selected memory cells undergoing a programming operation, forexample.

The transition from the pre-charge phase 802 to the programming phase804 is indicated at time 806. Responsive to initiating the programmingphase 804, the SGD(SEL) and SGD(INH) potentials decrease as shown inFIG. 8 to a level indicated in Table 1. Substantially concurrently,WL(INH), WL(SEL), EDGE_WL and the SGS potential levels increase as shownin FIG. 8 and as indicated in Table 1. For example, the WL(INH) bias isadjusted to a Vpass potential, such as to 10V, for example. The Vpasspotential might be a constant potential (e.g., Vinh of 10V) across allunselected word lines and/or the Vpass potential might change (e.g.,Vbias of 0-6V) dependent upon various conditions, such as proximity ofan unselected word line to the selected word line. Thus, by biasing oneor more unselected word lines to a Vpass potential, a channel potentialmight be induced, such as in the channel region 730, which issubstantially equal (e.g., equal) to the BL(SEL) potential applied tobit line 706, for example.

The WL(SEL) bias potential comprises a programming potential applied tothe word line coupled to the selected memory cell, such as word line 718of FIG. 7, for example. This applied programming potential (e.g., Vpgmprogramming pulse) might increase from 15V up to 20V, for example. Itshould be noted that the edge word lines might be biased to a potentialthe same as other unselected word lines or might be biased to adifferent potential such as indicated in Table 1. When the selected wordline comprises an edge word line, that edge word line might be biased asthe WL(SEL) (i.e., selected word line).

Various embodiments according to the present disclosure might bedescribed by further reference to Table 1 and to the memory array shownin FIG. 7. For example, memory cell 728 might be selected forprogramming. Thus, it may be desirable to have a predictable andconsistent potential difference between the channel region 730 and theprogramming potential (e.g., Vpgm) applied to the selected word line 718during a programming operation, for example. It may further be desirableto have a predictable and consistent channel potential established inthe channel region 732 of the structure 704 which does not comprise aselected memory cell. For example, a desirability to have a consistentchannel potential of 8V established through capacitive coupling asdiscussed above. Continuing with the present example, the channel region730 might be more consistently biased by biasing the selected bit line(e.g., coupled to a string of memory cells comprising a selected memorycell 728) to substantially the same potential (e.g., the same potential)as the slot. For example, the slot might be biased to a potential of0.5V and the selected bit line might be biased to a potential that is+/−0.5V of the slot potential. Although, not shown in Table 1, theselected bit line and the slot might be commonly biased to a potentialsuch as 0V according to one or more embodiments of the presentdisclosure. Further, by biasing the SGS line to substantially the samepotential as the slot potential, an additional reduction in leakagecurrents between the channel 730 and the slot 712 might be achieved. Thevarious embodiments are not limited to biasing the SGS line and the slotto the same potential. The slot might be biased to 0.5V whereas the SGSline might be biased to 0.3V during a programming operation, forexample.

Continuing with the same example, methods according to variousembodiments of the present disclosure might further improve theconsistency of the channel 732 potential of the unselected structure 704which is coupled to the selected bit line. For example, although the SGDstructure 746 might be biased to 0V, leakage might still occur throughthe drain select gate 746. However, by biasing the selected bit line,such as to 0.5V as shown in Table 1, the potential difference betweenthe channel 732 and the bit line is reduced. This facilitates areduction in leakage between the channel 732 boosted up to a potentialby capacitive coupling (e.g., to 8V) and the selected bit line duringthe programming operation.

Thus, biasing the selected bit line and the slot to substantially thesame potential and/or biasing the slot and the SGS line to substantiallythe same potential according to one or more embodiments might facilitatean improvement in programming stabilization, for example. Further, bybiasing one or more selected bit lines to a positive potential equal toor greater than the SGD (e.g., SGD(INH)) line might facilitate animprovement in boosting characteristics, such as the boosted channelregion 732 (e.g., through capacitive coupling) of an unselectedstructure 704, for example.

TABLE 1 SELECTED BLOCK DE-SELECTED BLOCK SIGNAL SELECTED INHIBITEDSELECTED INHIBITED BL 0 V-1 V ~2.3 V 0 V-1 V ~2.3 V   WL Vpgm Vinh ~10 V0 V 0 V 15 V-20 V Vbias 0 V~6 V EDGE WL N/A Vbias 0 V~6 V 0 V 0 V SGDSGD(SEL) 2 V, SGD(INH) 0 V 0 V~0.5 V SGS 0 V-0.5 V 0 V 0 V SLOT 0 V-1.5V 0 V-1.5 V PWELL Floating Floating (PILLAR)

The pre-charge 802 and programming 804 phases and applied potentials asshown in FIG. 8 and Table 1 might be repeated one or more times, such asuntil all memory cells selected for programming have completedprogramming according to various embodiments of the present disclosure.It should also be noted that more than one bit line of a particularblock of memory cells might be selected and biased as discussed withrespect to Table 1 and according to various embodiments of the presentdisclosure. For example, bit lines BL1 308 ₁ and BLN 308N shown in FIG.3 might comprise selected bit lines and bit line BL2 3082 might beinhibited such as shown in Table 1. A subsequent programming operationmight inhibit bit lines BL1 308 ₁ and BLN 308N shown in FIG. 3 and BL23082 might comprise a selected bit line and be biased under theconditions shown in Table 1 according to one or more embodiments of thepresent disclosure, for example.

Methods according to the various embodiments of the present disclosure,such as the programming operations discussed above with respect to FIG.7 and Table 1, might be performed on a number of memory arrayconfigurations. These methods might be performed on the 3D NAND memoryarrays discussed above with respect to FIGS. 3, 4 and 5, for example.Such arrays may include floating body architecture memory arraystructures configured to exhibit floating body characteristics duringprogramming operations according to various embodiments of the presentdisclosure.

FIG. 9 is a functional block diagram of an electronic system having atleast one memory device according to one or more embodiments of thepresent disclosure. The memory device 900 illustrated in FIG. 9 iscoupled to a memory access device, such as a processor 910. Theprocessor 910 may be a microprocessor or some other type of controllingcircuitry. The memory device 900 and the processor 910 form part of anelectronic system 920. The memory device 900 has been simplified tofocus on features of the memory device that are helpful in understandingvarious embodiments of the present disclosure.

The memory device 900 includes one or more memory arrays 930 that mightbe logically arranged in banks of rows and columns. According to one ormore embodiments, the memory cells of memory array 930 are flash memorycells configured as a 3D NAND array. The memory array 930 might includemultiple banks and blocks of memory cells residing on a single ormultiple die as part of the memory device 900. Memory array 930 mightcomprise SLC and/or MLC memory. The memory array 930 might also beadaptable to store varying densities (e.g., MLC (four level) and MLC(eight level)) of data in each cell, for example.

An address buffer circuit 940 is provided to latch address signalsprovided on address input connections AO-Ax 942. Address signals arereceived and decoded by a row decoder 944 and a column decoder 948 toaccess the memory array 930. Row decoder 944 might comprise drivercircuitry configured to bias the word lines of the memory array 930, forexample. It will be appreciated by those skilled in the art, with thebenefit of the present description, that the number of address inputconnections 942 might depend on the density and architecture of thememory array 930. That is, the number of address digits increase withboth increased memory cell counts and increased bank and block counts,for example.

The memory device 900 reads data in the memory array 930 by sensingvoltage or current changes in the memory array columns using sensedevices, such as sense/data cache circuitry 950. The sense/data cachecircuitry 950, in at least one embodiment, is coupled to read and latcha row of data from the memory array 930. The sense/data cache circuitry950 might comprise driver circuitry to bias bit lines to variouspotentials according to one or more embodiments of the presentdisclosure. Data input and output (I/O) buffer circuitry 960 is includedfor bi-directional data communication over a plurality of dataconnections 962 with the processor 910. Write/erase circuitry 956 isprovided to write data to or to erase data from the memory array 930.

Control circuitry 970 is configured, at least in part, to facilitateimplementing various embodiments of the present disclosure. Controlcircuitry 970 might be coupled (not shown) to one or more of theelements of the memory device 900. For example, the control circuitrymight be coupled to the row decoder 944 and configured to cause the rowdecoder driver circuitry to bias particular word lines of the memoryarray 930 according to various embodiments of the present disclosure.Control circuitry 970 might be coupled (not shown) to and configured tocause the sense/data cache driver circuitry 950 to bias particular bitlines of the array 930 according to one or more embodiments. In oneembodiment, control circuitry 970 and/or firmware or other circuitry canindividually, in combination, or in combination with other elements,form an internal controller. As used herein, however, a controller neednot necessarily include any or all of such components. In someembodiments, a controller can comprise an internal controller (e.g.,located on the same die as the memory array) and/or an externalcontroller. In at least one embodiment, the control circuitry 970 mayutilize a state machine.

Control signals and commands can be sent by the processor 910 to thememory device 900 over the command bus 972. The command bus 972 may be adiscrete signal or may be comprised of multiple signals, for example.These command signals 972 are used to control the operations on thememory array 930, including data read, data write (e.g., program), anderase operations. The command bus 972, address bus 942 and data bus 962may all be combined or may be combined in part to form a number ofstandard interfaces (e.g., communications interfaces) 978. For example,the interface 978 between the memory device 900 and the processor 910might be a Universal Serial Bus (USB) interface. The interface 978 mightalso be a standard interface used with many hard disk drives (e.g.,SATA, PATA) as are known to those skilled in the art.

The electronic system illustrated in FIG. 9 has been simplified tofacilitate a basic understanding of the features of the memory and isfor purposes of illustration only. A more detailed understanding ofinternal circuitry and functions of non-volatile memories are known tothose skilled in the art.

CONCLUSION

In summary, one or more embodiments of the present disclosure providemethods of biasing memory arrays, such as 3D NAND memory arrays, inmemory devices, e.g., non-volatile memory devices. These methods mightfacilitate increased predictability in resulting biasing conditionsduring operation of the memory device. These methods might facilitate asignificant increase the reliability and consistency of biasingconditions within the array of memory cells during a programming and/orerase operation, for example. A reduction in program disturb and chargeleakage phenomenon might also be realized.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat other configurations may be substituted for the specificembodiments shown. Many adaptations of the disclosure will be apparentto those of ordinary skill in the art. Accordingly, this application isintended to cover any adaptations or variations of the disclosure.

What is claimed is:
 1. A memory device, comprising: a first data lineselectively connected to a first end of a first string ofseries-connected memory cells; a second data line selectively connectedto a first end of a second string of series-connected memory cells; afirst select gate connected in series between the first end of the firststring of series-connected memory cells and the first data line; and asecond select gate connected in series between the first end of thesecond string of series-connected memory cells and the second data line:a controller, wherein the controller is configured to cause the memorydevice to perform a method comprising: applying a first voltage level tothe first data line while applying a second voltage level, higher thanthe first voltage level, to the second data line; while applying thefirst voltage level to the first data line and while applying the secondvoltage level to the second data line, applying a third voltage level toa particular access line coupled to a memory cell of the first string ofseries-connected memory cells selected for programming; and whileapplying the first voltage level to the first data line and whileapplying the second voltage level to the second data line, applying afourth voltage level to a control gate of the second select gate,wherein a differential between the third voltage level and the firstvoltage level is configured to increase a threshold voltage of thememory cell selected for programming; and wherein the first voltagelevel is a positive voltage level higher than or equal to the fourthvoltage level.
 2. The memory device of claim 1, wherein the method thatthe controller is configured to cause the memory device to performfurther comprises applying a fifth voltage level to a control gate ofthe first select gate while applying the first voltage level to thefirst data line and while applying the second voltage level to thesecond data line, wherein the fifth voltage level is higher than thefirst voltage level.
 3. The memory device of claim 1, wherein the thirdvoltage level applied to the particular access line while applying thesecond voltage level to the second data line and while applying thefourth voltage level to the control gate of the second select gate isconfigured to inhibit increasing a threshold voltage of a memory cell ofthe second string of series-connected memory cells coupled to theparticular access line.
 4. The memory device of claim 1, wherein themethod that the controller is configured to cause the memory device toperform further comprises applying a respective voltage level to eachremaining access line coupled to any memory cell of the first string ofseries-connected memory cells not selected for programming whileapplying the third voltage level to the particular access line, whereinthe respective voltage levels applied to each remaining access linecoupled to any memory cell of the first string of series-connectedmemory cells not selected for programming are each lower than the thirdvoltage level.
 5. The memory device of claim 4, wherein the respectivevoltage level applied to a particular remaining access line coupled to amemory cell of the first string of series-connected memory cells notselected for programming is different than the respective voltage levelapplied to a different remaining access line coupled to a memory cell ofthe first string of series-connected memory cells not selected forprogramming.
 6. A memory device, comprising: a first data lineselectively connected to a first end of a first string ofseries-connected memory cells; a second data line selectively connectedto a first end of a second string of series-connected memory cells; afirst select gate connected in series between the first data line andthe first end of the first string of series-connected memory cells; asecond select gate connected in series between the second data line andthe first end of the second stringy of series-connected memory; cells; aparticular access line coupled to a first memory cell of the firststring of series-connected memory cells selected for programming andcoupled to a second memory cell of the second string of series-connectedmemory cells to be inhibited from programming; and a controller, whereinthe controller is configured to cause the memory device to perform amethod comprising: applying a first voltage level to the first data linewhile applying the first voltage level to the second data line; applyinga second voltage level, lower than the first voltage level, to the firstdata line while continuing to apply the first voltage level to thesecond data line; while applying the second voltage level to the firstdata line and while applying the first voltage level to the second dataline, applying a third voltage level to the particular access line; andwhile applying the second voltage level to the first data line, andwhile applying the first voltage level to the second data line, andwhile applying the third voltage level to the particular access line:activating the first select gate comprising applying a voltage levelhigher than the second voltage level to a control gate of the firstselect gate; and deactivating the second select gate comprising applyinga voltage level lower than or equal to the second voltage level to acontrol gate of the second select gate; wherein a differential betweenthe third voltage level and the second voltage level is configured toincrease a threshold voltage of the first memory cell; and wherein thesecond voltage level is a positive voltage level.
 7. The memory deviceof claim 6, wherein the first voltage level is higher than or equal to0.5V and lower than or equal to 1V.
 8. The memory device of claim 6,wherein the third voltage level applied to the particular access linewhile applying the second voltage level to the second data line andwhile applying the voltage level lower than or equal to the secondvoltage level to the control gate of the second select gate isconfigured to inhibit increasing a threshold voltage of a memory cell ofthe second string of series-connected memory cells coupled to theparticular access line.
 9. A memory device, comprising: a first dataline selectively connected to a first end of a first string ofseries-connected memory cells; a second data line selectively connectedto a first end of a second string of series-connected memory cells, afirst select gate connected in series between the first data line andthe first end of the first string of series-connected memory cells; asecond select gate connected in series between the second data line andthe first end of the second string of series-connected memory cells; athird select gate connected in series between a source and a second endof the first string of series-connected memory cells; a fourth selectgate connected in series between the source and the second end of thesecond string of series-connected memory cells; a particular access linecoupled to a first memory cell of the first string of series-connectedmemory cells selected for programming and coupled to a second memorycell of the second string of series-connected memory cells to beinhibited from programming; and a controller, wherein the controller isconfigured to cause the memory device to perform a method comprising:applying a first voltage level to the first data line while applying thefirst voltage level to the second data line: applying a second voltagelevel, lower than the first voltage level, to the first data line whilecontinuing to apply the first voltage level to the second data line,while applying the second voltage level to the first data line and whileapplying the first voltage level to the second data line, applying athird voltage level to the particular access line; and while applyingthe second voltage level to the first data line, and while applying thefirst voltage level to the second data line, and while applying thethird voltage level to the particular access line: activating the firstselect gate; deactivating the second select gate; deactivating the thirdselect gate; and deactivating the fourth select gate; wherein adifferential between the third voltage level and the second voltagelevel is configured to increase a threshold voltage of the first memorycell; and wherein the second voltage level is a positive voltage level.10. The memory device of claim 9, wherein, in the method that thecontroller is configured to cause the memory device to perform,deactivating the third select gate comprises deactivating the thirdselect gate by applying a voltage level to a control gate of the thirdselect gate that is higher than a voltage level applied to a controlgate of the fourth select gate while deactivating the fourth selectgate.
 11. The memory device of claim 9, wherein the method that thecontroller is configured to cause the memory device to perform furthercomprises applying a fourth voltage level to the source whiledeactivating the third select gate and while deactivating the fourthselect gate, wherein the fourth voltage level is higher than the secondvoltage level.
 12. The memory device of claim 9, wherein the method thatthe controller is configured to cause the memory device to performfurther comprises applying a fourth voltage level to the source whiledeactivating the third select gate and while deactivating the fourthselect gate, wherein the fourth voltage level is lower than or equal tothe second voltage level.
 13. The memory device of claim 9, furthercomprising: a fifth select gate connected in series between the firstdata line and a first end of a third string of series-connected memorycells; and a sixth select gate connected in series between the sourceand a second end of the third string of series-connected memory cells;wherein the particular access line is further coupled to a third memorycell of the third string of series-connected memory cells to beinhibited from programming; and wherein the method that the controlleris configured to cause the memory device to perform further comprises:deactivating the fifth select gate while activating the first selectgate; and deactivating the sixth select gate while deactivating thethird select gate.
 14. An electronic system, comprising: acommunications interface; a memory access device coupled to thecommunications interface; and a memory device coupled to thecommunications interface, the memory device comprising: a first dataline selectively connected to a first end of a first string ofseries-connected memory cells; a second data line selectively connectedto a first end of a second string of series-connected memory cells; anda controller, wherein the controller is configured to cause the memorydevice to perform a method comprising: applying a positive first voltagelevel to the first data line while applying a second voltage level,higher than the first voltage level, to the second data line; connectingthe first data line to the first end of the first string ofseries-connected memory cells while applying the first voltage level tothe first data line and while applying a second voltage level to thesecond data line; isolating the second data line from the first end ofthe second string of series-connected memory cells while connecting thefirst data line to the first end of the first string of series-connectedmemory cells; isolating a second end of the first string ofseries-connected memory cells from a source and isolating a second endof the second string of series-connected memory cells from the sourcewhile connecting the first data line to the first end of the firststring of series-connected memory cells and while isolating the seconddata line from the first end of the second string of series-connectedmemory cells; and applying a third voltage level to a particular accessline coupled to a memory cell of the first string of series-connectedmemory cells selected for programming while connecting the first dataline to the first end of the first string of series-connected memorycells and while isolating the second data line from the first end of thesecond string of series-connected memory cells; wherein the thirdvoltage level applied to the particular access line is configured toincrease a threshold voltage of the memory cell selected for programmingwhile connecting the first data line to the first end of the firststring of series-connected memory cells; and wherein the third voltagelevel applied to the particular access line is configured to inhibitincreasing a threshold voltage of a memory cell of the second string ofseries-connected memory cells coupled to the particular access linewhile isolating the second data line from the first end of the secondstring of series-connected memory cells.
 15. The electronic system ofclaim 14, wherein the first voltage level is higher than or equal to0.5V.
 16. The electronic system of claim 15, wherein the first voltagelevel is lower than or equal to 1V.
 17. The electronic system of claim14, wherein the method that the controller is configured to cause thememory device to perform further comprises applying a voltage level to afirst select gate connected in series between the first data line andthe first end of the first string of series-connected memory cells thatis higher than the first voltage level to connect the first data line tothe first end of the first string of series-connected memory cells. 18.The electronic system of claim 14, wherein the method that thecontroller is configured to cause the memory device to perform furthercomprises isolating the second end of the first string ofseries-connected memory cells from the source while applying a voltagelevel to the source that is lower than or equal to the first voltagelevel.
 19. An electronic system, comprising: a communications interface;a memory access device coupled to the communications interface; and amemory device coupled to the communications interface, the memory devicecomprising: a first data line selectively connected to a first end of afirst string of series-connected memory cells; a second data lineselectively connected to a first end of a second string ofseries-connected memory cells; and a controller, wherein the controlleris configured to cause the memory device to perform a method comprising:applying a positive first voltage level to the first data line whileapplying a second voltage level, higher than the first voltage level, tothe second data line; connecting the first data line to the first end ofthe first string of series-connected memory cells while applying thefirst voltage level to the second data line; applying a voltage level toa first select gate connected in series between the first data line andthe first end of the first string of series-connected memory cells thatis higher than the first voltage level to connect the first data line tothe first end of the first string of series-connected memory cells;isolating the second data line from the first end of the second stringof series-connected memory cells while connecting the first data line tothe first end of the first string of series-connected memory cells;applying a voltage level to a second select gate connected in seriesbetween the second data line and the first end of the second string ofseries-connected memory cells that is lower than or equal to the secondvoltage level to isolate the second data line from the first end of thesecond string of series-connected memory cells; applying a third voltagelevel to a particular access line coupled to a memory cell of the firststring of series-connected memory cells selected for programming whileconnecting the first data line to the first end of the first string ofseries-connected memory cells and while isolating the second data linefrom the first end of the second string of series-connected memorycells; wherein the third voltage level applied to the particular accessline is configured to increase a threshold voltage of the memory cellselected for programming, while connecting the first data line to thefirst end of the first string of series-connected memory cells; andwherein the third voltage level applied to the particular access line isconfigured to inhibit increasing a threshold voltage of a memory cell ofthe second string of series-connected memory cells coupled to theparticular access line while isolating the second data line from thefirst end of the second string of series-connected memory cells.
 20. Theelectronic system of claim 19, wherein the method that the controller isconfigured to cause the memory device to perform further comprisesapplying a voltage level to the second select gate that is lower than orequal to the first voltage level to isolate the second data line fromthe first end of the second string of series-connected memory cells.